Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US16564071Application Date: 2019-09-09
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Publication No.: US11133315B2Publication Date: 2021-09-28
- Inventor: Keunnam Kim , Yoosang Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2018-0117776 20181002
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/423 ; H01L21/28 ; H01L21/311 ; H01L29/49

Abstract:
Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device comprises a substrate having a trench, a gate dielectric layer covering a surface of the trench, a gate electrode filling a lower portion of the trench, a capping pattern on the gate electrode in the trench, and a work function control pattern between the gate electrode and the capping pattern in the trench. The gate dielectric layer comprises a first segment having a first thickness between the gate electrode and the trench and a second segment having a second thickness between the capping pattern and the trench. The second thickness is less than the first thickness.
Information query
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