Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16280665Application Date: 2019-02-20
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Publication No.: US11133399B2Publication Date: 2021-09-28
- Inventor: Kenichi Yoshimochi
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agent Gregory M. Howison
- Priority: JPJP2018-030901 20180223
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/423 ; H01L29/778 ; H01L21/285 ; H01L29/45 ; H01L29/40 ; H01L29/165 ; H01L21/8234 ; H01L21/8238 ; H01L29/20 ; H01L29/49
Abstract:
A semiconductor device includes a semiconductor layer which has a first device formation region and a second device formation region, a first HEMT which is formed in the first device formation region and has a first two-dimensional electron gas region as a channel, a second HEMT which is formed in the second device formation region and has a second two-dimensional electron gas region as a channel, and a region separation structure which is formed in the semiconductor layer and defines the first device formation region and the second device formation region.
Public/Granted literature
- US20190267467A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-08-29
Information query
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