Invention Grant
- Patent Title: Plastic semiconductor material and preparation method thereof
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Application No.: US16967119Application Date: 2018-02-12
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Publication No.: US11136692B2Publication Date: 2021-10-05
- Inventor: Xun Shi , Ruiheng Liu , Feng Hao , Tuo Wang
- Applicant: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee Address: CN Shanghai
- Agency: Alleman Hall Creasman & Tuttle LLP
- Priority: CN201810117079.4 20180206
- International Application: PCT/CN2018/076460 WO 20180212
- International Announcement: WO2019/153335 WO 20190815
- Main IPC: C30B29/46
- IPC: C30B29/46 ; C01B19/00 ; C30B11/02 ; C30B11/10 ; C30B28/02 ; C30B33/02 ; H01L29/24
Abstract:
Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag2-δXδS1-ηYη(I), in which 0≤δ
Information query
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