Invention Grant
- Patent Title: Solid-state imaging element, manufacturing method, and electronic apparatus
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Application No.: US16316172Application Date: 2017-06-30
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Publication No.: US11139329B2Publication Date: 2021-10-05
- Inventor: Kenju Nishikido , Takekazu Shinohara , Shinichiro Noudo , Misato Kondo
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JPJP2016-140380 20160715
- International Application: PCT/JP2017/024102 WO 20170630
- International Announcement: WO2018/012314 WO 20180118
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus, in which irregular reflection of light inside a solid-state imaging element package can be suppressed.
In the solid-state imaging element, a plurality of pixels is planarly arranged, a connection portion utilized for connection to the outside is provided on a more outer side than an imaging region, and an open portion that is opened up to the connection portion from a light incident surface side of the imaging region where light is incident is formed. Additionally, a plurality of protruding portions periodically arranged is formed on a counterbore surface that is a surface inside the open portion excluding the connection portion. The present technology can be applied to, for example, a back-illuminated type or layered CMOS image sensor.
In the solid-state imaging element, a plurality of pixels is planarly arranged, a connection portion utilized for connection to the outside is provided on a more outer side than an imaging region, and an open portion that is opened up to the connection portion from a light incident surface side of the imaging region where light is incident is formed. Additionally, a plurality of protruding portions periodically arranged is formed on a counterbore surface that is a surface inside the open portion excluding the connection portion. The present technology can be applied to, for example, a back-illuminated type or layered CMOS image sensor.
Public/Granted literature
- US20210183934A1 SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC APPARATUS Public/Granted day:2021-06-17
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