A method for programming a memory system including a plurality of memory cells includes performing a first program operation on the plurality of the memory cells. The method also includes identifying a first memory cell and a second set of memory cell from the plurality of memory cells based on threshold voltages of the plurality of memory cells after performing the first program operations. The method further includes performing a second operation on the plurality of the memory cells by applying a first cross voltage to the first memory cell and a second cross voltage to the second memory cell.