Invention Grant
- Patent Title: Gas curtain for semiconductor manufacturing system
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Application No.: US16600054Application Date: 2019-10-11
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Publication No.: US11145517B2Publication Date: 2021-10-12
- Inventor: Kent Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/3065 ; H01L21/67 ; H01J37/32 ; H01L21/311 ; H01L21/02
Abstract:
The present disclosure relates to a semiconductor device manufacturing system. The semiconductor device manufacturing system can include a chamber, a slit valve configured to provide access to the chamber, a chuck disposed in the chamber and configured to hold a substrate, and a gas curtain device disposed between the chuck and the slit valve and configured to flow an inert gas to form a gas curtain. An example benefit of the gas curtain is to block an inflow of oxygen or moisture from entering the chamber to ensure a yield and reliability of the semiconductor manufacturing processes conducted in the chamber.
Information query
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