Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US16656796Application Date: 2019-10-18
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Publication No.: US11145614B2Publication Date: 2021-10-12
- Inventor: Jiun Yi Wu , Chen-Hua Yu , Chung-Shi Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/56 ; H01L21/768 ; H01L23/498

Abstract:
A method includes placing metal-core solder balls on conductive pads of a first semiconductor device, wherein the metal-core solder balls include a metal core surrounded by a solder material, and forming a device structure, forming the device structure including placing the first semiconductor device on a carrier substrate, encapsulating the first semiconductor device with an encapsulant, wherein the encapsulant covers the metal-core solder balls, performing a planarization process on the encapsulant, wherein the planarization process exposes the metal-core solder balls, and forming a redistribution structure over the encapsulant and the first semiconductor device, wherein the redistribution structure is electrically connected to the metal-core solder balls.
Public/Granted literature
- US20210118835A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE Public/Granted day:2021-04-22
Information query
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