Invention Grant
- Patent Title: Solder material for semiconductor device
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Application No.: US16893707Application Date: 2020-06-05
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Publication No.: US11145615B2Publication Date: 2021-10-12
- Inventor: Hirohiko Watanabe , Shunsuke Saito , Yoshitaka Nishimura , Fumihiko Momose
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JP2015-184264 20150917,JP2016-007022 20160118
- Main IPC: H01L23/00
- IPC: H01L23/00 ; C22C13/02 ; H01L23/053 ; B23K35/02 ; B23K35/26

Abstract:
A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.
Public/Granted literature
- US20200303337A1 SOLDER MATERIAL FOR SEMICONDUCTOR DEVICE Public/Granted day:2020-09-24
Information query
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