Invention Grant
- Patent Title: Semiconductor storage device and manufacturing method thereof
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Application No.: US16352015Application Date: 2019-03-13
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Publication No.: US11145670B2Publication Date: 2021-10-12
- Inventor: Yasuhito Yoshimizu , Tomohiko Sugita
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2018-154947 20180821
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L29/792 ; H01L29/66 ; G11C16/04 ; H01L27/1157
Abstract:
A semiconductor storage device according to an embodiment comprises a substrate. A stack body having first conductive layers and first insulating layers alternately stacked in a first direction is provided on the substrate. A pillar part extends in the first direction in the stack body and has a memory film. An insulating member extends in the first direction at a position different from that of the pillar part in the stack body. A phosphorus-containing insulator is provided below the stack body and the insulating member.
Public/Granted literature
- US20200066751A1 SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-02-27
Information query
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