An array substrate is disclosed. The array substrate includes a semiconductor active layer, a gate insulation layer, a first metal layer, an interlayer dielectric layer, a second metal layer, a planarization layer and a passivation layer sequentially disposed on a base substrate; wherein the array substrate is provided with a row driving unit, including a capacitor structure; wherein the capacitor structure includes a first capacitive plate formed in the semiconductor active layer, a second capacitive plate formed in the first metal layer and a third capacitive plate formed in the second metal layer; and wherein projections of the first capacitive plate and the second capacitive plate on the base substrate are partially overlapped, projections the second capacitive plate and the third capacitive plate on the base substrate are partially overlapped and the third capacitive plate is electrically connected to the first capacitive plate through a first via hole.