Invention Grant
- Patent Title: Semiconductor structure and method of forming the same
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Application No.: US16667893Application Date: 2019-10-29
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Publication No.: US11145727B2Publication Date: 2021-10-12
- Inventor: Sheng-Hwa Lee , Hsiu-Ming Chen
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: CKC & Partners Co., LLC
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/40 ; H01L21/762 ; H01L29/423 ; H01L21/8234 ; H01L29/51 ; H01L29/66 ; H01L29/49
Abstract:
A semiconductor structure includes a pair of active regions, a first isolation structure, a gate structure, and a pair of contacts. The first isolation structure is disposed between the active regions. The gate structure is disposed on the first isolation structure. The contacts are respectively disposed on the active regions. Each of the contacts has a bottom surface and a sidewall substantially perpendicular to the bottom surface.
Public/Granted literature
- US20210126095A1 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2021-04-29
Information query
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