Invention Grant
- Patent Title: Semiconductor laser and fabrication method thereof
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Application No.: US16449343Application Date: 2019-06-22
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Publication No.: US11146038B2Publication Date: 2021-10-12
- Inventor: Cunzhu Tong , Jiaxin Xu , Lijie Wang , Shili Shu , Sicong Tian , Xin Zhang , Lijun Wang
- Applicant: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
- Applicant Address: CN Jilin
- Assignee: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
- Current Assignee: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
- Current Assignee Address: CN Jilin
- Priority: CN201811593627.7 20181225
- Main IPC: H01S5/22
- IPC: H01S5/22 ; H01S5/065 ; H01S5/026 ; H01S5/042 ; H01S5/34
Abstract:
A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.
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