Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US16557754Application Date: 2019-08-30
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Publication No.: US11152069B2Publication Date: 2021-10-19
- Inventor: Sanad Bushnaq , Noriyasu Kumazaki , Masashi Yamaoka
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JPJP2018-238456 20181220
- Main IPC: G11C16/08
- IPC: G11C16/08 ; G11C16/04 ; H01L27/11556 ; G11C16/14 ; G11C16/24 ; G11C16/10 ; G11C16/26

Abstract:
According to one embodiment, a semiconductor storage device includes a first memory string including a first memory transistor, a first word line connected to a gate electrode of the first memory transistor, a source line connected to one end of the memory string, and a first connection transistor connected between the first word line and the source line.
Information query