Invention Grant
- Patent Title: Method of forming titanium nitride films with (200) crystallographic texture
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Application No.: US16521386Application Date: 2019-07-24
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Publication No.: US11152207B2Publication Date: 2021-10-19
- Inventor: Kandabara Tapily
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; C23C16/34 ; H01L21/3205 ; H01L21/285 ; H01L21/67
Abstract:
A substrate processing method is described for forming a titanium nitride material that may be used for superconducting metallization or work function adjustment applications. The substrate processing method includes depositing by vapor phase deposition at least one monolayer of a first titanium nitride film on a substrate, and treating the first titanium nitride film with plasma excited hydrogen-containing gas, where the first titanium nitride film is polycrystalline and the treating increases the (200) crystallographic texture of the first titanium nitride film. The method further includes depositing by vapor phase deposition at least one monolayer of a second titanium nitride film on the treated at least one monolayer of the first titanium nitride film, and treating the at least one monolayer of the second titanium nitride film with plasma excited hydrogen-containing gas.
Public/Granted literature
- US20200035481A1 METHOD OF FORMING TITANIUM NITRIDE FILMS WITH (200) CRYSTALLOGRAPHIC TEXTURE Public/Granted day:2020-01-30
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