Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US17002781Application Date: 2020-08-26
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Publication No.: US11152216B2Publication Date: 2021-10-19
- Inventor: Mitsuhiko Ogihara
- Applicant: FILNEX INC.
- Applicant Address: JP Tokyo
- Assignee: FILNEX INC.
- Current Assignee: FILNEX INC.
- Current Assignee Address: JP Tokyo
- Agency: Hauptman Ham, LLP
- Priority: JPJP2018-035221 20180228
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/02 ; H01L21/20
Abstract:
A method for manufacturing a semiconductor device includes the steps of forming a fixing layer that is a thin film for coupling at least a portion of a main surface of the semiconductor thin film layer on the side opposite to a base material substrate side and at least a portion of the surface of the base material substrate on a semiconductor thin film layer side, forming a void by removing a partial region of the semiconductor thin film layer or the base material substrate, coupling an organic material layer formed on a pick-up substrate to the fixing layer after forming the void, separating the semiconductor thin film layer from the first substrate by moving the pick-up substrate away from the base material substrate with the organic material layer bonded to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate.
Information query
IPC分类:
