Invention Grant
- Patent Title: Fluorocarbon molecules for high aspect ratio oxide etch
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Application No.: US16502181Application Date: 2019-07-03
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Publication No.: US11152223B2Publication Date: 2021-10-19
- Inventor: Curtis Anderson , Rahul Gupta , Vincent M. Omarjee , Nathan Stafford , Christian Dussarrat
- Applicant: American Air Liquide, Inc.
- Applicant Address: US CA Fremont
- Assignee: American Air Liquide, Inc.
- Current Assignee: American Air Liquide, Inc.
- Current Assignee Address: US CA Fremont
- Agent Yan Jiang
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L21/3213 ; H01L21/3065 ; C07C17/263 ; H01L21/02 ; C07C19/08 ; H01L21/311 ; C07C21/18 ; C07C23/06
Abstract:
Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
Public/Granted literature
- US20190326129A1 FLUOROCARBON MOLECULES FOR HIGH ASPECT RATIO OXIDE ETCH Public/Granted day:2019-10-24
Information query
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