Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US16070350Application Date: 2016-03-07
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Publication No.: US11152275B2Publication Date: 2021-10-19
- Inventor: Takanobu Kajihara , Katsuhiko Omae , Shunsuke Fushie , Yoshinori Kaneto , Junya Suzuki , Yuki Okabe
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Agent Richard C. Turner
- International Application: PCT/JP2016/056975 WO 20160307
- International Announcement: WO2017/154072 WO 20170914
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L21/56 ; H01L23/495 ; H01L23/00
Abstract:
A semiconductor device includes a first insulating resin member sealing a mounting surface of a lead frame, and a second insulating resin member sealing a heat dissipating surface. The second insulating resin member contains a filler having a maximum diameter of 0.02 mm to 0.075 mm. The second insulating resin member includes a thin molded portion formed in contact with the heat dissipating surface of the lead frame. The thin molded portion has a thickness 1.1 times to 2 times the maximum diameter of the filler. The semiconductor device includes, at an interface between the first insulating resin member and the second insulating resin member, a mixture layer in which these resins are mixed with each other.
Public/Granted literature
- US20210175141A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-06-10
Information query
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