Invention Grant
- Patent Title: Fan-out semiconductor package having metal pattern layer electrically connected embedded semiconductor chip and redistribution layer
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Application No.: US16684936Application Date: 2019-11-15
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Publication No.: US11152292B2Publication Date: 2021-10-19
- Inventor: Sunghawn Bae
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0147488 20181126
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/31 ; H01L23/13

Abstract:
The present invention provides a fan-out semiconductor package, and the fan-out semiconductor package includes a semiconductor chip, an encapsulant covering the semiconductor chip, a connection structure disposed below the semiconductor chip and including a redistribution layer, and first and second metal pattern layers disposed on different levels on the semiconductor chip. The first metal pattern layer is to electrically connect to an electrical connection member such as a frame, provided for electrical connection of the fan-out semiconductor package in a vertical direction through a path via the second metal pattern layer.
Public/Granted literature
- US20200168537A1 FAN-OUT SEMICONDUCTOR PACKAGE Public/Granted day:2020-05-28
Information query
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