A semiconductor device of the present invention includes a first main electrode and a second main electrode respectively disposed on a first main surface and a second main surface of a semiconductor substrate, a protective film disposed on an edge part of the first main electrode; and a first metal film disposed in a region enclosed by the protective film on the first main electrode. The first metal film has a film thickness at a central portion larger than that at a part in contact with the protective film, and has irregularities on a surface thereof.