Invention Grant
- Patent Title: Semiconductor device including storage node electrode having filler and method for manufacturing the same
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Application No.: US16908833Application Date: 2020-06-23
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Publication No.: US11152368B2Publication Date: 2021-10-19
- Inventor: Yoonyoung Choi , Byunghyun Lee , Seungjin Kim , Byeongjoo Ku , Sangjae Park , Hangeol Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2019-0149036 20191119
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/768 ; H01L23/532
Abstract:
A semiconductor device includes a substrate, a storage node electrode disposed on the substrate, a dielectric layer at least partially covering the storage node electrode, and a plate electrode dispose on the dielectric layer. The storage node electrode has a pillar shape, and includes a seam disposed therein. The storage node electrode includes a concave side surface disposed at a higher level than the seam.
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