Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16089421Application Date: 2017-03-30
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Publication No.: US11152468B2Publication Date: 2021-10-19
- Inventor: Kunihiro Tsubomi , Tetsuo Endoh , Masakazu Muraguchi
- Applicant: Tohoku University
- Applicant Address: JP Miyagi
- Assignee: Tohoku University
- Current Assignee: Tohoku University
- Current Assignee Address: JP Miyagi
- Agency: Fox Rothschild LLP
- Agent Robert J. Sacco; Carol E. Thorstad-Forsyth
- Priority: JPJP2016-073752 20160331
- International Application: PCT/JP2017/013250 WO 20170330
- International Announcement: WO2017/170867 WO 20171005
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/417 ; H01L29/78 ; H01L29/423 ; H01L21/76 ; H01L29/06
Abstract:
Provided is a semiconductor device. A semiconductor device includes a substrate, a buffer layer provided on the substrate, a semiconductor layer provided on the buffer layer, a body region provided at a part of a surface layer of the semiconductor layer, a source region provided at a part of a surface layer of the body region, a drain region provided at a part of the surface layer of the semiconductor layer outside the body region, a gate insulating layer provided to extend from the surface layer of the body region to a predetermined depth, a gate electrode provided on the gate insulating layer, a source electrode provided on the source region, a drain electrode provided on the drain region, and an isolation region provided to extend from the surface layer of the semiconductor layer to above the predetermined depth.
Public/Granted literature
- US20190115430A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-18
Information query
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