Invention Grant
- Patent Title: 2-dimensional electron gas and 2-dimensional hole gas junction based semiconductor device
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Application No.: US16830324Application Date: 2020-03-26
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Publication No.: US11152471B1Publication Date: 2021-10-19
- Inventor: Koon Hoo Teo , Nadim Chowdhury
- Applicant: Mitsubishi Electric Research Laboratories, Inc.
- Applicant Address: US MA Cambridge
- Assignee: Mitsubishi Electric Research Laboratories, Inc.
- Current Assignee: Mitsubishi Electric Research Laboratories, Inc.
- Current Assignee Address: US MA Cambridge
- Agent Gennadiy Vinokur; Hironori Tsukamoto
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L29/20 ; H01L29/45 ; H01L29/861
Abstract:
Semiconductor devices including a first region having a first three Nitride (III-N) layer and a second III-N layer, the second III-N layer is over the first III-N. The second III-N layer has spontaneous polarization less than the first III-N layer, such that a two-dimensional hole gas (2-DHG) will be formed at a junction of the first III-N layer to the second III-N layer. An Anode forms an ohmic contact to the 2-DHG. A second region includes a third III-N layer and a forth III-N layer, such that the fourth III-N layer is over the third III-N. The forth III-N layer has spontaneous polarization greater than the third III-N layer, such that two-dimensional electron gas (2-DEG) will be formed at a junction of the third III-N layer to the forth III-N layer. A Cathode forms an ohmic contact to the 2-DEG. The first and second regions are connected at an interface.
Public/Granted literature
- US20210305374A1 2-Dimensional Electron Gas and 2-Dimensional Hole Gas Junction Based Semiconductor Device Public/Granted day:2021-09-30
Information query
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