Invention Grant
- Patent Title: Light emitting diode with multiple tunnel junction structure
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Application No.: US16648662Application Date: 2018-09-04
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Publication No.: US11152537B2Publication Date: 2021-10-19
- Inventor: James Chinmo Kim
- Applicant: SUNDIODE KOREA
- Applicant Address: KR Gwangju
- Assignee: SUNDIODE KOREA
- Current Assignee: SUNDIODE KOREA
- Current Assignee Address: KR Gwangju
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2017-0120141 20170919
- International Application: PCT/KR2018/010245 WO 20180904
- International Announcement: WO2019/059561 WO 20190328
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/08 ; H01L33/00

Abstract:
A light emitting diode having multiple tunnel junctions is provided. This comprises the common contact layer, the first and second tunnel junction layers respectively disposed on the bottom surface and the upper surface of the common contact layer, the first light emitting structure disposed on the bottom surface of the first tunnel junction layer and the second light emitting structure disposed on the upper surface of the second tunnel junction layer. Light emitting structures emitting blue and green light may be disposed above and below the common contact layer. By injecting holes into the first light emitting structure and the second light emitting structure through the common contact layer formed of the n-type semiconductor, current spreading effect is improved, leading to improved light emitting efficiency. Since the n-type semiconductor layer can be disposed on the upper surface exposed to the outside, risk of damage occurring in subsequent fabrication steps can be reduced.
Public/Granted literature
- US20200287080A1 LIGHT EMITTING DIODE WITH MULTIPLE TUNNEL JUNCTION STRUCTURE Public/Granted day:2020-09-10
Information query
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