Invention Grant
- Patent Title: Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (finFET) device structure
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Application No.: US15918354Application Date: 2018-03-12
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Publication No.: US11158508B2Publication Date: 2021-10-26
- Inventor: Tsung-Yao Wen , Sheng-Chen Wang , Sai-Hooi Yeong , Hsueh-Chang Sung , Ya-Yun Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/265 ; H01L21/8238 ; H01L21/8234 ; H01L29/66 ; H01L21/84 ; H01L27/092 ; H01L27/12 ; H01L29/10 ; H01L21/324 ; H01L29/04 ; H01L29/06 ; H01L29/161 ; H01L27/088
Abstract:
A fin field device structure and method for forming the same are provided. The FinFET device structure includes a protruding structure extending from a substrate and an anti-punch through implant (APT) region formed in the protruding structure. The FinFET device structure includes a barrier layer formed on the APT region, and the barrier layer has a width in a horizontal direction. The width gradually tapers from a bottom of the barrier layer to a top of the barrier layer.
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