Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US16386816Application Date: 2019-04-17
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Publication No.: US11158586B2Publication Date: 2021-10-26
- Inventor: Chang-Chun Hsieh , Wu-Der Yang , Ching-Feng Chen
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/552 ; H01L23/498 ; H01L23/00 ; H01L23/16

Abstract:
The present disclosure relates to a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a substrate including a first surface and a conductive trace extending over the substrate; a die disposed over the first surface of the substrate; a molding disposed over the first surface of the substrate and covering the die; and a metallic layer surrounding the molding and the substrate, wherein the metallic layer is electrically connected to at least a portion of the conductive trace exposed through the substrate.
Public/Granted literature
- US20200211979A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-07-02
Information query
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