Invention Grant
- Patent Title: Fin field effect transistor (FinFET) device and method for forming the same
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Application No.: US16822448Application Date: 2020-03-18
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Publication No.: US11158744B2Publication Date: 2021-10-26
- Inventor: Zhe-Hao Zhang , Tung-Wen Cheng , Chang-Yin Chen , Che-Cheng Chang , Yung-Jung Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/306 ; H01L21/8234 ; H01L21/311 ; H01L29/78 ; H01L29/66 ; H01L29/165 ; H01L29/08 ; H01L27/088
Abstract:
A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate and a fin structure extending above the substrate. The FinFET structure includes an epitaxial structure formed on the fin structure, and the epitaxial structure has a first height. The FinFET structure also includes fin sidewall spacers formed adjacent to the epitaxial structure. The sidewall spacers have a second height and the first height is greater than the second height, and the fin sidewall spacers are configured to control a volume and the first height of the epitaxial structure.
Public/Granted literature
- US20200220019A1 Fin Field Effect Transistor (FINFET) Device and Method for Forming the Same Public/Granted day:2020-07-09
Information query
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