C—As—Se—Ge ovonic materials for selector devices and memory devices using same

Invention Grant

US11158787B2 C—As—Se—Ge ovonic materials for selector devices and memory devices using same 有权

Please log in to see more content

Patent Title: C—As—Se—Ge ovonic materials for selector devices and memory devices using same
Application No.: US16716948

Application Date: 2019-12-17
Publication No.: US11158787B2

Publication Date: 2021-10-26
Inventor: Huai-Yu Cheng , I-Ting Kuo , Hsiang-Lan Lung
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Applicant Address: TW Hsinchu
Assignee: MACRONIX INTERNATIONAL CO., LTD.
Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
Current Assignee Address: TW Hsinchu
Agency: Haynes Beffel & Wolfeld LLP
Main IPC: H01L45/00
IPC: H01L45/00 ; G11C13/00 ; H01L27/24

C—As—Se—Ge ovonic materials for selector devices and memory devices using same

Abstract:

A voltage sensitive switching device has a first electrode, a second electrode, and a switching layer between the first and second electrodes, comprising a composition of carbon C, arsenic As, selenium Se and germanium Ge thermally stable to temperatures over 400° C. The switching device is used in 3D crosspoint memory.

Public/Granted literature

US20210184112A1 CAsSeGe OVONIC MATERIALS FOR SELECTOR DEVICES AND MEMORY DEVICES USING SAME Public/Granted day:2021-06-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L45/00	无电位跃变势垒或表面势垒的，专门适用于整流、放大、振荡或切换的固态器件，例如介电三极管；奥氏效应器件；专门适用于制造或处理这些器件或其部件的方法或设备（由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00；应用超导电性或高导性的器件入H01L39/00；压电器件入H01L41/00；体负阻效应器件入H01L47/00）