Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
Abstract:
There is provided a technique that includes: a transfer chamber configured to transfer a substrate; at least two process chambers configured to process the substrate that is transferred from the transfer chamber by heating the substrate with a microwave generated from a heating device; and a cooling chamber spatially connected to the transfer chamber and disposed on a side wall of the transfer chamber between the at least two process chambers at an equal distance from the at least two process chambers, the cooling chamber including a first gas supplier configured to supply a purge gas that purges an internal atmosphere at a first gas flow rate and a first exhauster including an exhaust pipe configured to exhaust the purge gas, and the cooling chamber configured to cool the substrate heated by the microwave using the purge gas.
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