Invention Grant
- Patent Title: Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
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Application No.: US16796523Application Date: 2020-02-20
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Publication No.: US11177143B2Publication Date: 2021-11-16
- Inventor: Yukitomo Hirochi , Takashi Nogami , Yoshihiko Yanagisawa
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/677

Abstract:
There is provided a technique that includes: a transfer chamber configured to transfer a substrate; at least two process chambers configured to process the substrate that is transferred from the transfer chamber by heating the substrate with a microwave generated from a heating device; and a cooling chamber spatially connected to the transfer chamber and disposed on a side wall of the transfer chamber between the at least two process chambers at an equal distance from the at least two process chambers, the cooling chamber including a first gas supplier configured to supply a purge gas that purges an internal atmosphere at a first gas flow rate and a first exhauster including an exhaust pipe configured to exhaust the purge gas, and the cooling chamber configured to cool the substrate heated by the microwave using the purge gas.
Information query
IPC分类: