Invention Grant
- Patent Title: Conductive contacts in semiconductor on insulator substrate
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Application No.: US16661539Application Date: 2019-10-23
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Publication No.: US11177285B2Publication Date: 2021-11-16
- Inventor: Kangguo Cheng , Rama Divakaruni
- Applicant: ELPIS TECHNOLOGIES INC.
- Applicant Address: CA Ottawa
- Assignee: ELPIS TECHNOLOGIES INC.
- Current Assignee: ELPIS TECHNOLOGIES INC.
- Current Assignee Address: CA Ottawa
- Agency: VanTek IP LLP
- Agent Shin Hung
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L27/12 ; H01L29/66 ; H01L21/311 ; H01L29/08 ; H01L21/324 ; H01L21/306 ; H01L29/06 ; H01L21/768 ; H01L29/78 ; H01L23/528 ; H01L21/8234
Abstract:
A semiconductor device includes a gate stack arranged on a channel region of a semiconductor layer and a semiconductor layer arranged on an insulator layer. A crystalline source/drain region is arranged in a cavity in the insulator layer, and a spacer is arranged adjacent to the gate stack, the spacer arranged over the source/drain region. A second insulator layer is arranged on the spacer and the gate stack, and a conductive contact is arranged in the source/drain region.
Public/Granted literature
- US20200058677A1 CONDUCTIVE CONTACTS IN SEMICONDUCTOR ON INSULATOR SUBSTRATE Public/Granted day:2020-02-20
Information query
IPC分类:
