Invention Grant
- Patent Title: Memory device and manufacturing method thereof
-
Application No.: US16443772Application Date: 2019-06-17
-
Publication No.: US11177430B2Publication Date: 2021-11-16
- Inventor: Ya-Jui Tsou , Zong-You Luo , Chee-Wee Liu , Shao-Yu Lin , Liang-Chor Chung , Chih-Lin Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu; TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu; TW Taipei
- Agency: Maschoff Brennan
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L27/22 ; H01L43/12 ; G11C11/16
Abstract:
A magnetoresistive memory device includes a memory stack, a spin-orbit-torque (SOT) layer, and a free layer. The memory stack includes a pinned layer and a reference layer over the pinned layer. The SOT layer is spaced apart from the memory stack. The free layer is over the memory stack and the SOT layer.
Information query
IPC分类:
