Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17016716Application Date: 2020-09-10
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Publication No.: US11177808B2Publication Date: 2021-11-16
- Inventor: Takayuki Hiraoka
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy, LLP
- Priority: JPJP2020-040768 20200310
- Main IPC: H03K19/0185
- IPC: H03K19/0185 ; H03K3/037

Abstract:
A semiconductor device includes an I/O circuit configured to be supplied with a first voltage, a second voltage higher than the first voltage, and a third voltage higher than the second voltage, and to receive an input signal based on the first voltage. The I/O circuit includes an enabler circuit configured to be supplied with the second voltage, and to generate a first signal based on the second voltage, and a first level shifter circuit coupled to the enabler circuit, and configured to, based on the first signal, level-shift a signal based on the second voltage to a signal based on the third voltage.
Public/Granted literature
- US20210288646A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-09-16
Information query
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