Active matrix OLED display with normally-on thin-film transistors

Invention Grant

US11183115B2 Active matrix OLED display with normally-on thin-film transistors 有权

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Patent Title: Active matrix OLED display with normally-on thin-film transistors
Application No.: US16016065

Application Date: 2018-06-22
Publication No.: US11183115B2

Publication Date: 2021-11-23
Inventor: Bahman Hekmatshoartabari , Ghavam G. Shahidi
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Applicant Address: US NY Armonk
Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee Address: US NY Armonk
Agency: Tutunjian & Bitetto, P.C.
Agent Erik Johnson
Main IPC: H01L29/165
IPC: H01L29/165 ; G09G3/3233 ; G09G3/3266 ; G09G3/3258 ; H01L27/32 ; H01L29/80 ; H01L27/12 ; H01L29/16

Active matrix OLED display with normally-on thin-film transistors

Abstract:

A method for forming a pixel circuit includes forming transistors on a substrate; forming a passivation layer over the transistors; forming a contact hole to a source of a transistor; forming a transparent conductor that forms a contact in the contact hole and a resistor to control pixel current; and forming an organic light emitting diode (OLED) with an anode connecting to the resistor.

Public/Granted literature

US20180308432A1 ACTIVE MATRIX OLED DISPLAY WITH NORMALLY-ON THIN-FILM TRANSISTORS Public/Granted day:2018-10-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/12	..按其构成材料的特征区分的
H01L29/16	...除掺杂材料或其他杂质外，只包括以游离态存在的周期系中Ⅳ族元素的
H01L29/161	....包含在H01L29/16组中的两种或更多种元素的
H01L29/165	.....在不同半导体区域中的