Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16933993Application Date: 2020-07-20
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Publication No.: US11183388B2Publication Date: 2021-11-23
- Inventor: Takahiro Tamura , Yuichi Onozawa , Misaki Takahashi
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JPJP2016-032401 20160223
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L27/06 ; H01L29/32 ; H01L29/868 ; H01L21/322 ; H01L29/861 ; H01L21/265 ; H01L27/07 ; H01L29/36 ; H01L29/06 ; H01L29/423 ; H01L29/78 ; H01L29/08 ; H01L29/10 ; H01L29/739
Abstract:
A semiconductor device is provided. The semiconductor device includes: a first region formed on a front surface side of a semiconductor substrate; a drift region formed closer to a rear surface of the semiconductor substrate than the first region is; a buffer region that: is formed closer to the rear surface of the semiconductor substrate than the drift region is; and has one or more peaks of an impurity concentration that are higher than an impurity concentration of the drift region; and a lifetime killer that: is arranged on a rear surface side of the semiconductor substrate; and shortens a carrier lifetime, wherein a peak of a concentration of the lifetime killer is arranged between: a peak that is closest to a front surface of the semiconductor substrate among the peaks of the impurity concentration in the buffer region; and the rear surface of the semiconductor substrate.
Public/Granted literature
- US20200350170A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-11-05
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