Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
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Application No.: US16841716Application Date: 2020-04-07
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Publication No.: US11183396B2Publication Date: 2021-11-23
- Inventor: Shinichiro Shimomura
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Amin, Turocy & Watson, LLP
- Priority: JPJP2019-080689 20190422
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L21/3213 ; H01L21/67 ; H01L21/683
Abstract:
A substrate processing method according to the present disclosure includes heating and removing. The heating includes heating a substrate with a copper film that is formed thereon. The removing includes removing a copper film that is formed on a peripheral part of the substrate after the heating by supplying a processing liquid that contains an acidic chemical liquid to the peripheral part.
Public/Granted literature
- US20200335356A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2020-10-22
Information query
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