Invention Grant
- Patent Title: Self-limiting liners for increasing contact trench volume in n-type and p-type transistors
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Application No.: US16564666Application Date: 2019-09-09
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Publication No.: US11183430B2Publication Date: 2021-11-23
- Inventor: Kangguo Cheng , Choonghyun Lee , Juntao Li , Peng Xu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Randall Bluestone
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/02 ; H01L29/417
Abstract:
Embodiments of the invention include semiconductor devices having a first n-type S/D region, a second n-type S/D region, and a first layer of protective material over the second n-type S/D region, wherein the first layer of protective material includes a first type of material and a second type of material. A second layer of protective material is formed over the first layer of protective material, wherein the second layer of protective material includes an oxide of the second type of material. The devices further include a first p-type S/D region, a second p-type S/D region, and the second layer of protective material over the second p-type S/D region, wherein the second p-type S/D region second layer of protective material includes the first type of material and the second type of material, and wherein the second layer of protective material includes the oxide of the second type of material.
Public/Granted literature
- US20190393103A1 SELF-LIMITING LINERS FOR INCREASING CONTACT TRENCH VOLUME IN N-TYPE AND P-TYPE TRANSISTORS Public/Granted day:2019-12-26
Information query
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