A semiconductor structure and a method for manufacturing the same are disclosed. The semiconductor structure includes an underlying semiconductor layer, an insulation layer, a first through semiconductor via, a second through semiconductor via, and an upper conductive connecting portion. The insulation layer is disposed over the underlying semiconductor layer. The first through semiconductor via extends continuously through the insulation layer. The first through semiconductor via has a first upper end above the insulation layer. The second through semiconductor via extends continuously through the insulation layer. The second through semiconductor via has a second upper end above the insulation layer. The upper conductive connecting portion is laterally connected to a first upper lateral surface of the first upper end and a second upper lateral surface of the second upper end.