Invention Grant
- Patent Title: Functional component within interconnect structure of semiconductor device and method of forming same
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Application No.: US16674232Application Date: 2019-11-05
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Publication No.: US11183454B2Publication Date: 2021-11-23
- Inventor: Hsien-Wei Chen , Ming-Fa Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768 ; H01L23/48 ; H01L23/528
Abstract:
A semiconductor device includes a substrate. A first dielectric layer is over the substrate. A first interconnect is in the first dielectric layer. A second dielectric layer is over the first dielectric layer and the first interconnect. A conductive via extends through the first dielectric layer, the second dielectric layer and the substrate. A topmost surface of the conductive via is level with a topmost surface of the second dielectric layer. A third dielectric layer is over the second dielectric layer and the conductive via. A fourth dielectric layer is over the third dielectric layer. A second interconnect is in the fourth dielectric layer. The second interconnect extends through the third dielectric layer and the second dielectric layer and physically contacts the first interconnect.
Public/Granted literature
- US20200176380A1 FUNCTIONAL COMPONENT WITHIN INTERCONNECT STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME Public/Granted day:2020-06-04
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