Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device for improving solder connection strength
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Application No.: US16765332Application Date: 2018-10-19
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Publication No.: US11183472B2Publication Date: 2021-11-23
- Inventor: Takuya Nakamura
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JPJP2017-227414 20171128
- International Application: PCT/JP2018/039008 WO 20181019
- International Announcement: WO2019/107002 WO 20190606
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L27/146

Abstract:
Even in a case where a pad becomes smaller, solder connection strength is improved. A semiconductor device includes a pad, a diffusion layer, and a melting layer. The pad included by the semiconductor device includes a concave portion on a surface at which solder connection is to be performed. The diffusion layer included by the semiconductor device is disposed at the concave portion and constituted with a metal which remains on the surface of the pad while diffusing into solder upon the solder connection. The melting layer included by the semiconductor device is disposed adjacent to the diffusion layer and constituted with a metal which diffuses and melts into the solder upon the solder connection.
Information query
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