Invention Grant
- Patent Title: Semiconductor structure
-
Application No.: US16852565Application Date: 2020-04-20
-
Publication No.: US11183475B2Publication Date: 2021-11-23
- Inventor: Jie Chen , Hsien-Wei Chen , Ying-Ju Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor structure including a plurality of semiconductor dies, an insulating encapsulant, and a redistribution structure disposed on the semiconductor dies and the insulating encapsulant is provided. The insulating encapsulant is interposed between adjacent two of the semiconductor dies, and the insulating encapsulant includes a first portion wider than a second portion connected to the first portion. The redistribution structure includes a dielectric layer overlying the insulating encapsulant, and a conductive trace overlying the dielectric layer and opposite to the insulating encapsulant. The conductive trace includes at least one turn and is connected to a conductive terminal of one of the adjacent two of the semiconductor dies, and the conductive trace extends across the dielectric layer to reach another conductive terminal of another one of the adjacent two of the semiconductor dies.
Public/Granted literature
- US20200251439A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2020-08-06
Information query
IPC分类: