Invention Grant
- Patent Title: Power switching devices with high dV/dt capability and methods of making such devices
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Application No.: US16811526Application Date: 2020-03-06
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Publication No.: US11184001B2Publication Date: 2021-11-23
- Inventor: Qingchun Zhang , Adam Barkley , Sei-Hyung Ryu , Brett Hull
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H03K17/12 ; H01L29/423 ; H01L29/10 ; H01L29/739 ; H01L29/06 ; H01L29/16 ; H01L29/417 ; H01L29/40
Abstract:
Power switching devices include a semiconductor layer structure that has an active region and an inactive region. The active region includes a plurality of unit cells and the inactive region includes a field insulating layer on the semiconductor layer structure and a gate bond pad on the field insulating layer opposite the semiconductor layer structure. A gate insulating pattern is provided on the semiconductor layer structure between the active region and the field insulating layer, and at least one source/drain contact is provided on the semiconductor layer structure between the gate insulating pattern and the field insulating layer.
Public/Granted literature
- US20200212908A1 POWER SWITCHING DEVICES WITH HIGH DV/DT CAPABILITY AND METHODS OF MAKING SUCH DEVICES Public/Granted day:2020-07-02
Information query
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