Invention Grant
- Patent Title: IC tag and manufacturing method of IC tag
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Application No.: US16721959Application Date: 2019-12-20
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Publication No.: US11188802B2Publication Date: 2021-11-30
- Inventor: Daisuke Oda
- Applicant: LAPIS SEMICONDUCTOR CO., LTD.
- Applicant Address: JP Yokohama
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: JCIPRNET
- Priority: JPJP2018-245423 20181227
- Main IPC: G06K19/07
- IPC: G06K19/07 ; G06K19/077

Abstract:
An IC tag in which precision reduction is suppressed and which is compact and manufactured easily, and a manufacturing method of IC tag are provided. The IC tag has: antennas disposed on one surface of a substrate; a capacitor which includes a dielectric and first and second electrodes disposed on one surface of the substrate, and in which an electrostatic capacitance changes irreversibly corresponding to changes in ambient environment; and an IC chip which detects the electrostatic capacitance of the capacitor via a pair of external terminals to which the first and second electrodes are respectively connected, and wirelessly transmits information based on a detection result via the antennas.
Public/Granted literature
- US20200210801A1 IC TAG AND MANUFACTURING METHOD OF IC TAG Public/Granted day:2020-07-02
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