Invention Grant
- Patent Title: Diffusion barrier layer
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Application No.: US16865514Application Date: 2020-05-04
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Publication No.: US11189479B2Publication Date: 2021-11-30
- Inventor: Benjamin Colombeau , Johanes F. Swenberg , Steven C. H. Hung
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L23/58 ; H01L21/02 ; H01L21/762 ; H01L21/768
Abstract:
A method of forming an electronic device is disclosed. The method comprises forming a barrier layer on a silicon layer, and depositing a silicon oxide layer on the barrier layer. The formation of the barrier layer on the silicon layer minimizes parasitic oxidation of the underlying silicon layer and minimizes defects in the silicon layer.
Information query
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