Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US16803653Application Date: 2020-02-27
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Publication No.: US11189494B2Publication Date: 2021-11-30
- Inventor: Kota Kobayashi
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy, LLP
- Priority: JPJP2019-162283 20190905
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L21/265 ; H01L21/04 ; B23K26/082 ; H01L21/268
Abstract:
A method of manufacturing a semiconductor device includes ion-implanting impurities into a wafer through a back surface of the wafer, a metal layer being formed on a front surface of the wafer; and activating the impurities by laser light illuminating the back surface of the wafer. The laser light is scanned on the back surface as providing a trajectory without bending. The trajectory includes curved portions intersecting in the back surface of the wafer. The laser light has a spot size on the back surface of the wafer, the spot size being larger than a distance between the curved portions adjacent to each other.
Public/Granted literature
- US20210074545A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-03-11
Information query
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