Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16184424Application Date: 2018-11-08
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Publication No.: US11189551B2Publication Date: 2021-11-30
- Inventor: Naoki Ohta , Keita Miyachi
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2017-224288 20171122
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/31

Abstract:
A semiconductor device according to an embodiment of the disclosure includes a base, a semiconductor element, a first conductor, and a second conductor. The base has an outer edge including a first part, a second part, and a third part. The first part and the second part are substantially parallel to each other. The third part extends in a direction that intersects both of the first part and the second part. The semiconductor element is covered with the base. The first conductor is coupled to the semiconductor element, and protrudes to an outside of the base from the first part of the outer edge. The second conductor is coupled to the semiconductor element, and protrudes to the outside of the base from the third part of the outer edge.
Public/Granted literature
- US20190157189A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-05-23
Information query
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