Invention Grant
- Patent Title: Semiconductor device with programmable anti-fuse feature and method for fabricating the same
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Application No.: US16794817Application Date: 2020-02-19
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Publication No.: US11189565B2Publication Date: 2021-11-30
- Inventor: Chin-Ling Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L21/762
Abstract:
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a peak portion positioned on the substrate, a gate insulating layer positioned on the peak portion and the substrate, a gate bottom conductive layer positioned on the gate insulating layer, and a first doped region positioned in the substrate and adjacent to one end of the gate insulating layer.
Public/Granted literature
- US20210257297A1 SEMICONDUCTOR DEVICE WITH PROGRAMMABLE ANTI-FUSE FEATURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-08-19
Information query
IPC分类:
