Invention Grant
- Patent Title: 3D-NAND mold
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Application No.: US16833899Application Date: 2020-03-30
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Publication No.: US11189635B2Publication Date: 2021-11-30
- Inventor: Chang Seok Kang , Tomohiko Kitajima , Mukund Srinivasan , Sanjay Natarajan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L29/792 ; H01L27/11575 ; H01L21/3205 ; H01L21/311 ; H01L21/677 ; H01L21/02 ; H01L21/3213
Abstract:
Methods of manufacturing memory devices are provided. The methods decrease the thickness of the first layers and increase the thickness of the second layers. Semiconductor devices are described having a film stack comprising alternating nitride and second layers in a first portion of the device, the alternating nitride and second layers of the film stack having a nitride:oxide thickness ratio (Nf:Of); and a memory stack comprising alternating word line and second layers in a second portion of the device, the alternating word line and second layers of the memory stack having a word line:oxide thickness ratio (Wm:Om), wherein 0.1(Wm:Om)
Public/Granted literature
- US20200312874A1 3D-NAND MOLD Public/Granted day:2020-10-01
Information query
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