Invention Grant
- Patent Title: Semiconductor device and light-emitting device
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Application No.: US13223475Application Date: 2011-09-01
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Publication No.: US11189642B2Publication Date: 2021-11-30
- Inventor: Kaoru Hatano
- Applicant: Kaoru Hatano
- Applicant Address: JP Kanagawa
- Assignee: Kaoru Hatano
- Current Assignee: Kaoru Hatano
- Current Assignee Address: JP Kanagawa
- Agency: Fish & Richardson P.C.
- Priority: JPJP2010-203341 20100910
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L31/00 ; H01L27/12 ; H01L51/52 ; H01L29/786

Abstract:
To provide a highly reliable semiconductor device including an oxide semiconductor. Further to provide a highly reliable light-emitting device including an oxide semiconductor. A second electrode sealed together with a semiconductor element including an oxide semiconductor hardly becomes inactive. A hydrogen ion and/or a hydrogen molecule produced by reaction of the active second electrode with moisture remaining in the semiconductor device and/or moisture entering from the outside of the device increase the carrier concentration in the oxide semiconductor, which causes a reduction in the reliability of the semiconductor device. An adsorption layer of a hydrogen ion and/or a hydrogen molecule may be provided on the other surface side of the second electrode having one surface in contact with the organic layer. Further, an opening which a hydrogen ion and/or a hydrogen molecule passes through may be provided for the second electrode.
Public/Granted literature
- US20120061671A1 SEMICONDUCTOR DEVICE AND LIGHT-EMITTING DEVICE Public/Granted day:2012-03-15
Information query
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