Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17081607Application Date: 2020-10-27
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Publication No.: US11189723B2Publication Date: 2021-11-30
- Inventor: Yasuyuki Hoshi
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JPJP2019-223280 20191210
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L29/16

Abstract:
A semiconductor device including a semiconductor substrate, a first semiconductor layer provided on a main surface of the semiconductor substrate, a second semiconductor layer selectively provided on a surface of the first semiconductor layer, a plurality of first and second semiconductor regions selectively provided in the second semiconductor layer at a surface thereof, and a plurality of trenches provided in a striped pattern that extends in a first direction. The first semiconductor regions include a plurality of connecting parts and a plurality of non-connecting parts that are alternately arranged in the first direction, each connecting part being continuous in a second direction orthogonal to the first direction, and each non-connecting part being separated into two halves in the second direction by one of the second semiconductor regions, each half including a plurality of regions having different resistance values, disposed in a descending order or an ascending order of the resistance values along the first direction.
Public/Granted literature
- US20210175353A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-06-10
Information query
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