Invention Grant
- Patent Title: Multilayered bottom electrode for MTJ-containing devices
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Application No.: US16552647Application Date: 2019-08-27
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Publication No.: US11189782B2Publication Date: 2021-11-30
- Inventor: Bruce B. Doris , Thitima Suwannasiri , Nathan P. Marchack , Pouya Hashemi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12 ; H01L27/22

Abstract:
A multilayered bottom electrode for a magnetic tunnel junction (MTJ) containing device is provided that includes, from bottom to top, a base segment having a first diameter and composed of a remaining portion of a first bottom electrode metal-containing layer, a middle segment having a second diameter and composed of a remaining portion of a second bottom electrode metal-containing layer, and an upper segment having a third diameter and composed of a remaining portion of a third bottom electrode metal-containing layer, wherein the first diameter is greater than the second diameter, and the third diameter is equal to, or less than, the second diameter. The wider base segment of each multilayered bottom electrode prevents tilting and/or bowing of the resultant bottom electrode. Thus, a stable bottom electrode is provided.
Public/Granted literature
- US20210066578A1 MULTILAYERED BOTTOM ELECTRODE FOR MTJ-CONTAINING DEVICES Public/Granted day:2021-03-04
Information query
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