Invention Grant
- Patent Title: Wide voltage trans-impedance amplifier
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Application No.: US16967745Application Date: 2020-04-30
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Publication No.: US11190140B2Publication Date: 2021-11-30
- Inventor: Chao Chen , Jun Yang , Xinning Liu
- Applicant: SOUTHEAST UNIVERSITY
- Applicant Address: CN Nanjing
- Assignee: SOUTHEAST UNIVERSITY
- Current Assignee: SOUTHEAST UNIVERSITY
- Current Assignee Address: CN Nanjing
- Agency: Bayramoglu Law Offices LLC
- Priority: CN201910434745.1 20190523
- International Application: PCT/CN2020/087985 WO 20200430
- International Announcement: WO2020/233384 WO 20201126
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F1/56

Abstract:
A wide voltage trans-impedance amplifier includes a first P-channel metal oxide semiconductor (PMOS) transistor PM1, a second PMOS transistor PM2, a third PMOS transistor PM3, a fourth PMOS transistor PM4, a fifth PMOS transistor PM5, a first bias voltage VB1, a second bias voltage VB2, a third bias voltage VB3, a first N-channel metal oxide semiconductor (NMOS) transistor NM1, and a second NMOS transistor NM2. A common-gate amplifier detects a change of an input voltage, and a negative feedback is constructed by injecting a current into a current mirror to achieve a low input impedance. The trans-impedance amplifier uses a common-gate amplifier to monitor an input voltage and uses a current mirror to perform the transconductance enhancement on an input transistor, while ensuring a relatively high loop gain.
Public/Granted literature
- US20210320624A1 WIDE VOLTAGE TRANS-IMPEDANCE AMPLIFIER Public/Granted day:2021-10-14
Information query
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